Comic Discussion > QUESTIONABLE CONTENT

QC Captions Vol. 159

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FunkyTuba:
Hanners: So... this...., is Momo?
Marigold: Yeah, I don't need her any more either.
USB Stick: It's ok, really... not as many peripherals to worry about anymore. The eels are more ticklish in here though.

WAYF:
Hanners: Why does this button make the USB extend a considerable number of inches? That doesn't change the amount of data it can hold, so why would they put that feature in?
Marigold: Oh, you'll see.

Zebediah:
Hannelore: "128 gigabytes of... butts?"
Marigold: "Not just any old butts either. Angus' butt!"

Thrudd:

Hanners: So the AI previously known as May is on here?
Marigold: This USB drive your dad lent me for field testing has improved memory cell properties by employing a structure called "P-BiCS." It solves the problem of the cell current degradation caused by an increase in the number of memory cell layers by improving the channel mobility of polysilicon TFT and it enhances the data retention properties by making improvements to the method of forming a SONOS film. Compared the BiCS with the other 3D NAND flash memories being developed by other companies, the BiCS is the most promising technology for Tbit-class storage devices in terms of the number of manufacturing processes, memory cell area, disturbance resistance and I have no idea what I just said but isn't it neat?

jwhouk:

--- Quote from: Thrudd on 27 Mar 2014, 06:47 ---
Hanners: So the AI previously known as May is on here?
Marigold: This USB drive your dad lent me for field testing has improved memory cell properties by employing a structure called "P-BiCS." It solves the problem of the cell current degradation caused by an increase in the number of memory cell layers by improving the channel mobility of polysilicon TFT and it enhances the data retention properties by making improvements to the method of forming a SONOS film. Compared the BiCS with the other 3D NAND flash memories being developed by other companies, the BiCS is the most promising technology for Tbit-class storage devices in terms of the number of manufacturing processes, memory cell area, disturbance resistance and I have no idea what I just said but isn't it neat?

--- End quote ---

Ladies and gentlemen, the winner.

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